IRLR024NTRPBF

HEXFET Power MOSFET, TO-252AA, advanced processing technique, 1.5 watts

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PartNumber:: IRLR024NTRPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2011-08-09

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Product Summary

The IRLR024NTRPBF is the fifth generation HEXFET power MOSFET from International Rectifier. It utilizes advanced processing techniques to achieve the lowest possible onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRLR024NTRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

Parametrics

IRLR024NTRPBF absolute maximum ratings: (1)Continuous Drain Current, VGS @10V, ID @TC = 25℃: 17A; (2)Continuous Drain Current, VGS @10V, ID @TC = 100℃: 12A; (3)Pulsed Drain Current, IDM: 72A; (4)Power Dissipation, PD @TC = 25℃: 45W; (5)Linear Derating Factor: 0.3W/℃; (6)Gate-to-Source Voltage, VGS: ±16V; (7)Single Pulse Avalanche Energy, EAS: 68mJ; (8)Avalanche Current, IAR: 11A; (9)Repetitive Avalanche Energy, EAR: 4.5mJ; (10)Peak Diode Recovery dv/dt, dv/dt: 5.0V/ns; (11)Operating Junction, TJ: -55 to + 175℃; (12)Storage Temperature Range, TSTG: -55 to + 175℃; (13)Soldering Temperature, for 10 seconds: 300(1.6mm from case).

Features

IRLR024NTRPBF features: (1)Logic-Level Gate Drive; (2)Surface Mount (IRLR024N); (3)Straight Lead (IRLU024N); (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated; (7)Lead-Free.