IRF640N

Power MOSFET, TO-220, 18A, 150 W, ± 20 V, IRF640N, International Rectifier

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Price:: US $0.48~0.65 / piece [Get Latest Price]

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PartNumber:: IRF640N

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-04-30

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Part Number:IRF640N
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Product Summary

The IRF640N is a Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF640N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF640N absolute maixmum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 18A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 13 A; (3)IDM Pulsed Drain Current: 72A; (4)PD @TC = 25℃ Power Dissipation: 150 W; (5)Linear Derating Factor: 1.0 W/℃; (6)VGS Gate-to-Source Voltage: ± 20 V; (7)EAS Single Pulse Avalanche Energy: 247 mJ; (8)IAR Avalanche Current: 18 A; (9)EAR Repetitive Avalanche Energy: 15 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 8.1 V/ns; (11)TJ, TSTG, Operating Junction and Storage Temperature Range: -55 to +175℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case )℃; (13)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF640N fetures: (1)Advanced Process Technology; (2)Dynamic dv/dt Rating; (3)175℃ Operating Temperature; (4)Fast Switching; (5)Fully Avalanche Rated; (6)Ease of Paralleling; (7)Simple Drive Requirements.