(China (Mainland))
Product Summary
The NJM4558L integrated circuit is a dual high-gain operational amplifier internally compensated and constructed on a single silicon chip using an advanced epitaxial process. Combining the features of the NJM741 with the close parameter matching and tracking of a dual device on a monolithic chip results in unique performance characteristics. Excellent channel separation allow the use of the dual device in single NJM741 operational amplifier applications providing density. The NJM4558L is especially well suited for applications in differential-in, defferential-out as well as in potentiometric amplifiers NJM4558L and where gain and phase matched channels are mandatory.
Parametrics
NJM4558L absolute maximum ratings: (1)Supply Voltage, V+/V-: ± 18 V ; (2)Differential Input Voltage, VID: ± 30 V ; (3)Input Voltage, VIC: ± 15 ( note ) V ; (4)Power Dissipation, VIC: ( DIP8 ) 500 ( DMP8 ) 300( SSOP8 ) 250 ( SIP8 ) 800 mW ; (5)Operating Temperature Range, Topr: -40~+85 ℃; (6)Storage Temperature Range, Tstg: -40~+125 ℃.
Features
NJM4558L features: (1)Operating Voltage ( ±4V~±18V ); (2)High Voltage Gain ( 100dB typ. ); (3)High Input Resistance ( 5MΩ typ. ); (4)Package Outline DIP8,DMP8,SIP8,SSOP8; (5)Bipolar Technology.
Diagrams
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 NJM4558L |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
Data Sheet |
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NJM4558LD |
NJR |
Operational Amplifiers - Op Amps Dual High Gain |
Data Sheet |
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