SST39VF040-70-4C-NHE

Product Summary

The SST39VF040-70-4C-NHE is a 64K x8, 128K x8, 256K x8 and 5124K x8 CMOS Multi-Purpose Flash (MPF) manufactured with SST’s proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST39VF040-70-4C-NHE device write (Program or Erase) with a 3.0- 3.6V power supply. The SST39VF040-70-4C-NHE device write with a 2.7-3.6V power supply. The devices conform to JEDEC standard pinouts for x8 memories.To meet surface mount requirements, the SST39VF040-70-4C-NHE device is offered in 32-lead PLCC and 32-lead TSOP packages. The SST39VF040-70-4C-NHE is also offered in a 48-ball TFBGA package. See Figures 1, 2, 3, and 4 for pin assignments.

Parametrics

SST39VF040-70-4C-NHE absolute maximum ratings: (1)Temperature Under Bias: -55°C to +125°C; (2)Storage Temperature: -65°C to +150°C; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD+0.5V; (4)Transient Voltage (<20 ns)on Any Pin to Ground Potential: -2.0V to VDD+Multi-Purpose Flash ; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 13.2V; (6)Package Power Dissipation Capability (Ta = 25°C): 1.0W; (7)Surface Mount Solder Reflow Temperature1: 260°C for 10 seconds; (8)Output Short Circuit Current2: 50 mA.

Features

SST39VF040-70-4C-NHE features: (1)Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8; (2)Single Voltage Read and Write Operations: 3.0-3.6V for SST39LF512/010/020/040, 2.7-3.6V for SST39VF512/010/020/040; (3)Superior Reliability: Endurance: 100,000 Cycles (typical), Greater than 100 years Data Retention; (4)Low Power Consumption (typical values at 14 MHz): Active Current: 5 mA (typical),Standby Current: 1 μA (typical); (5)Sector-Erase Capability: Uniform 4 KByte sectors; (6)Automatic Write Timing: Internal VPP Generation; (7)End-of-Write Detection: Toggle Bit Data# Polling; (8)CMOS I/O Compatibility; (9)JEDEC Standard: Flash EEPROM Pinouts and command sets.

Diagrams