Product Summary

The BC337-40 is a NPN epitaxial silicon transistor.It is widely applied in switching and amplifier. The BC337-40 is suitable for AF-Driver stages and low power output stages.

Parametrics

BC337-40 absolute maximum ratings: (1)Collector-Emitter Voltage, VCES: 50V; (2)Collector-Emitter Voltage, VCEO: 45V; (3)Emitter-Base Voltage, VEBO: 5V; (4)Collector Current (DC), IC: 800mA; (5)Collector Power Dissipation, PC: 625mW; (6)Junction Temperature, TJ: 150℃; (7)Storage Temperature, TSTG: -55 to 150℃.

Features

BC337-40 features: (1)Capable of 0.625Watts of Power Dissipation; (2)Collector-current 0.8A; (3)Collector-base Voltage :VCBO=50V(BC337) , VCBO=30V(BC338); (4)Lead Free Finish/RoHS Compliant (P Suffix designates; (5)RoHS Compliant. See ordering information); (6)Epoxy meets UL 94 V-0 flammability rating; (7)Moisure Sensitivity Level 1.

Diagrams

BC337-40 Package Dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BC337-40
BC337-40

NXP Semiconductors

Transistors Bipolar (BJT) TRANS GP BULK STR LEAD

Data Sheet

Negotiable 
BC337-40 T/R
BC337-40 T/R

NXP Semiconductors

Transistors Bipolar (BJT) TRANS GP TAPE RADIAL

Data Sheet

Negotiable 
BC337-40,116
BC337-40,116


TRANSISTOR NPN 500MA 45V TO-92

Data Sheet

Negotiable 
BC337-40,412
BC337-40,412


TRANSISTOR NPN 500MA 45V TO-92

Data Sheet

Negotiable 
BC337-40-AP
BC337-40-AP

Micro Commercial Components (MCC)

Transistors Bipolar (BJT) NPN -0.8A 0.625W

Data Sheet

0-20000: $0.03
BC337-40RL1
BC337-40RL1

ON Semiconductor

Transistors Bipolar (BJT) 800mA 50V NPN

Data Sheet

Negotiable 
BC337-40RL1G
BC337-40RL1G

ON Semiconductor

Transistors Bipolar (BJT) 800mA 50V NPN

Data Sheet

0-1: $0.22
1-25: $0.14
25-100: $0.11
100-500: $0.06
BC337-40ZL1
BC337-40ZL1

ON Semiconductor

Transistors Bipolar (BJT) 800mA 50V NPN

Data Sheet

Negotiable